Shenzhen Great Times Electronics

Applications

Fire alarm control panel (FACP)

Our integrated circuits and reference designs help you create fire alarm control panels (FACPs) with innovative features such as addressability, advanced human machine interface (HMI), hot swappable expansion modules and modular architectures.


FACP designs often require:

  • Power factor correction, higher power/thermal efficiency and compliance with EMC/EMI standards.
  • Lead-acid battery charging with seamless power switchover.
  • Multiple communication protocols on wired (Ethernet, RS-485, RS-232, USB) and wireless interfaces.
  • Delivery of power and command over a single-line to loop-powered devices.
  • Mechanical-relay reliability.


Products

DRV8251  - NEW50-V, 4.1-A H-bridge motor driver with integrated current regulation & latched OCP

TLV9351 Single, 40-V, 3.5-MHz, low-power operational amplifier

LM324LV Quad, 5.5-V, 1-MHz, 3-mV offset voltage operational amplifier

LPV801 Single, 5.5-V, 8-kHz, ultra low quiescent current (450-nA), 1.6-V min supply, RRO op amp

TL081H  - NEWSingle, 40-V, 5.25-MHz, 4-mV offset voltage, 20-V/µs, In to V+ op amp with -40°C to 125°C operation

LM324A Quad, 30-V, 1.2-MHz, 3-mV offset voltage operational amplifier

TLV2462A Dual, 6-V, 6.4-MHz, 1.5-mV offset, RRIO operational amplifier



TLE2022 Dual Precision Low-Power Single Supply Operational Amplifier

OPA376 Precision (0.025mV), low noise (7.5nV/rtHz), low quiescent current (760uA) op amp


INA219 26V, 12-bit, i2c output current/voltage/power monitor

INA230 36-V, 16-bit, I²C output current, voltage and power monitor with alert

CSD18540Q5B 60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.2 mOhm

CSD19538Q2 100-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 59 mOhm

CSD18533Q5A 60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.9 mOhm
CSD15571Q2 20-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 19.2 mOhm

CSD17483F4 30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6 mm, 260 mOhm, gate ESD protection

CSD19537Q3 100-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 14.5 mOhm









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